2SB510
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2SB510

SKU: 2SB510
2SB510 Transistor Silicon PNP CASE: TO39 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer NEC
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 800m
Max. hFE 320
Min hFE 60
Ic Max. (A) 1.5
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 1.0
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 116556
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