2SB533

SKU: 2SB533

2SB533 Transistor Germanium PNP CASE: TO39 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO39
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	10
Max. PD (W)	250m
Derate (Amb) (W/°C)	4.2m
hfe	75
Ic Max. (A)	2.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	PNP
Trans. Freq (Hz) Min.	1.2M
@VCE (test) (V)	0i
Oper. Temp (°C) Max.	100
@Ic (A)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	6 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	75
SKU	549786

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