2SB555

SKU: 2SB555

2SB555 Transistor Silicon PNP - CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Manufacturer	Toshiba
Case	TO3
Vbr CBO	140
Vbr CEO	140
Max. PD (W)	100
Derate (Amb) (W/°C)	800m
Max. hFE	140
Min hFE	40
Ic Max. (A)	12
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	6.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	660 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	84219

Back