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2SB555
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2SB555

SKU: 2SB555
2SB555 Transistor Silicon PNP - CASE: TO3 MAKE: Toshiba
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Manufacturer Toshiba
Case TO3
Vbr CBO 140
Vbr CEO 140
Max. PD (W) 100
Derate (Amb) (W/°C) 800m
Max. hFE 140
Min hFE 40
Ic Max. (A) 12
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 6.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 140 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 660 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 84219
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