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2SB557S
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2SB557S

SKU: 2SB557S
2SB557S Transistor Silicon PNP CASE: TO3 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
Product specifications
Equivalent 2SB557
Type Transistor Silicon PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 80
Derate (Amb) (W/°C) 640m
Max. hFE 140
Min hFE 40
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 767124
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