Weight |
0.01 kg
|
Case |
TO1 |
Type |
Transistor Germanium PNP |
Manufacturer |
Toshiba |
Vbr CBO |
30 |
Vbr CEO |
25 |
Max. PD (W) |
150m |
C(ob) (F) |
35p |
Derate (Amb) (W/°C) |
3.0m |
hfe |
80 |
Ic Max. (A) |
150m |
Icbo Max. @Vcb Max. (A) |
14u |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
1.0M |
@VCE (test) (V) |
1.0 |
Oper. Temp (°C) Max. |
75 |
@Ic (A) |
50m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.15 W |
Maximum Collector-Base Voltage |Vcb| |
30 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
12 V |
Maximum Collector Current |Ic max| |
0.15 A |
Max. Operating Junction Temperature (Tj) |
75 °C |
Collector Capacitance (Cc) |
70 pF |
Transition Frequency (ft): |
0.5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
80 |
SKU |
80704 |