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2SB567
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2SB567

SKU: 2SB567
2SB567 Transistor Silicon PNP CASE: TO220AA MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO220AA
Manufacturer Hitachi
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 320
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 4.0
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542452
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