2SB600

SKU: 2SB600

2SB600 Transistor Silicon PNP - CASE: TO3 MAKE: NEC

Price: £11.99

+ VAT 20% for UK purchases

£11.99

Qty

+ VAT 20% for UK purchases

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	NEC
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	200
Derate (Amb) (W/°C)	1.6
Max. hFE	200
Min hFE	40
Ic Max. (A)	15
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
@Temp. (test) (°C)	50
VRRM	600
Polarity	PNP
R(sat) (Û)	300m
1-Cycle Surge Current (A)	50
@Temp. (test) for Vf)	25
Vf Max.	1.0
Ir @25°C	10u
I(out) (If AVG) Max.	2.0
Trans. Freq (Hz) Min.	4.0M
@Volts (test) (V)	600
@If (test)	1.0
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	80722

Back