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2SB606
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2SB606

SKU: 2SB606
2SB606 Transistor Silicon PNP CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Fujitsu
Vbr CBO 250
Vbr CEO 250
Max. PD (W) 800m
Derate (Amb) (W/°C) 5.3m
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 540083
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