The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB608

2SB608

SKU: 2SB608
2SB608 Transistor Silicon PNP CASE: SOT78 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case SOT78
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 140
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 320
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 4.0
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542453
Back