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2SB609
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2SB609

SKU: 2SB609
2SB609 Transistor Silicon PNP CASE: TO66 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 320
Min hFE 60
Ic Max. (A) 4.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 900m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542454
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