2SB611A
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2SB611A

SKU: 2SB611A
2SB611A Transistor Silicon PNP CASE: TO3 MAKE: Hitachi
Product specifications
Equivalent 2SB611
Type Transistor Silicon PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 150
Vbr CEO 120
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 200
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
R(sat) (Û) 300m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 767089
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