The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB617A
View detailed images (13)

2SB617A

SKU: 2SB617A
2SB617A Transistor Silicon PNP - Case: XM20 Make: NEC
+ VAT 20% for UK purchases
Datasheet
2SB617A Datasheet
Product specifications
Case MT200
Type Transistor Silicon PNP
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 70
Derate (Amb) (W/°C) .56
Max. hFE 200
Min hFE 40
Ic Max. (A) 6.0
@Ic (test) (A) -1
Icbo Max. @Vcb Max. (A) -50u
Polarity PNP
Trans. Freq (Hz) Min. 14M
Oper. Temp (°C) Max. 140
@VCE (V) -5
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 343647
Back