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2SB617A
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2SB617A

SKU: 2SB617A
2SB617A Transistor Silicon PNP CASE: MT200 MAKE: NEC
Datasheet
2SB617A Datasheet
Product specifications
Type Transistor Silicon PNP
Case MT200
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 70
Derate (Amb) (W/°C) .56
Max. hFE 200
Min hFE 40
Ic Max. (A) 6.0
@Ic (test) (A) -1
Icbo Max. @Vcb Max. (A) -50u
Polarity PNP
Trans. Freq (Hz) Min. 14M
Oper. Temp (°C) Max. 140
@VCE (V) -5
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 343647
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