2SB625

SKU: 2SB625

2SB625 Transistor Silicon PNP CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	60
Derate (Amb) (W/°C)	480m
Max. hFE	200
Min hFE	40
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
R(sat) (Û)	500m
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	116582

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