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2SB632E
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2SB632E

SKU: 2SB632E
2SB632E Transistor Silicon PNP CASE: SOT32 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Sanyo Semiconductor
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 10
Derate (Amb) (W/°C) 86m
Max. hFE 200
Min hFE 100
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 90 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 571630
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