2SB637K

SKU: 2SB637K

2SB637K Transistor Silicon PNP CASE: TO92 MAKE: Hitachi

Datasheet

2SB637K Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Hitachi
Vbr CBO	50
Vbr CEO	50
Max. PD (W)	300m
C(ob) (F)	1.8p
hfe	160
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	1.8 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	343652

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