The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB64

2SB64

SKU: 2SB64
2SB64 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 25
Max. hFE 160
Min hFE 34
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 330u
Polarity PNP
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 75
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584231
Back