| Weight |
0.01 kg
|
| Equivalent |
2SB647C |
| Type |
Transistor Silicon PNP |
| Case |
TO92L |
| Manufacturer |
Hitachi |
| Vbr CBO |
120 |
| Vbr CEO |
80 |
| Max. PD (W) |
900m |
| C(ob) (F) |
20p |
| Derate (Amb) (W/°C) |
7.2m |
| hfe |
60 |
| Ic Max. (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
10u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
140M |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
150m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.9 W |
| Maximum Collector-Base Voltage |Vcb| |
100 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Transition Frequency (ft): |
70 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SKU |
16883 |