| 2SB647A Datasheet |
| Equivalent | 2SB647 | |
| Type | Transistor Silicon PNP | |
| Case | TO92L | |
| Manufacturer | Hitachi | |
| Vbr CBO | 120 | |
| Vbr CEO | 100 | |
| Max. PD (W) | 900m | |
| C(ob) (F) | 20p | |
| Derate (Amb) (W/°C) | 7.2m | |
| hfe | 60 | |
| Ic Max. (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 140M | |
| @VCE (test) (V) | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 150m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.9 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 100 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Transition Frequency (ft): | 70 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 343654 | |