2SB648B

SKU: 2SB648B

2SB648B Transistor Silicon PNP CASE: SOT32 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT32
Manufacturer	Hitachi
Vbr CBO	180
Vbr CEO	120
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	120
Min hFE	60
Ic Max. (A)	50m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	140M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	4.5 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	542930

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