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2SB648C
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2SB648C

SKU: 2SB648C
2SB648C Transistor Silicon PNP CASE: SOT32 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 120
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 200
Min hFE 100
Ic Max. (A) 50m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 542931
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