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2SB649
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2SB649

SKU: 2SB649
2SB649 Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
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Datasheet
2SB649 Datasheet
Product specifications
Equivalent 2SB649D
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 120
Max. PD (W) 1.0
Derate (Amb) (W/°C) 160m
Max. hFE 320
Min hFE 60
Ic Max. (A) 1.5
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 27 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 86213
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