The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB649AC
View detailed images (13)

2SB649AC

SKU: 2SB649AC
2SB649AC Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 160
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Max. hFE 200
Min hFE 100
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 27 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 767052
Back