2SB649D

SKU: 2SB649D

2SB649D Transistor Silicon PNP CASE: TO126 MAKE: Hitachi

Price: £4.79

+ VAT 20% for UK purchases

£4.79

Qty

+ VAT 20% for UK purchases

Product specifications

Weight	0.01 kg
Equivalent	2SB649
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Hitachi
Vbr CBO	180
Vbr CEO	120
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
Max. hFE	320
Min hFE	160
Ic Max. (A)	1.5
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	140M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	27 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	767050

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