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2SB65
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2SB65

SKU: 2SB65
2SB65 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 150m
C(ob) (F) 40p
Derate (Amb) (W/°C) 2.5m
hfe 65
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 15u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 539981
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