2SB650H

SKU: 2SB650H

2SB650H Transistor Silicon PNP CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Hitachi
Vbr CEO	100
Max. PD (W)	100
Max. hFE	20k
Min hFE	1.0k
Ic Max. (A)	15
@Ic (test) (A)	8.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	PNP
R(sat) (Û)	250m
Derate Above 25°C	800m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-36
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	16 A
Max. Operating Junction Temperature (Tj)	200 °C
Forward Current Transfer Ratio (hFE), MIN	8000
SKU	590769

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