2SB653

SKU: 2SB653

2SB653 Transistor Silicon PNP CASE: TO3 MAKE: Hitachi

Datasheet

2SB653 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB653A
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	60
Derate (Amb) (W/°C)	480m
Max. hFE	200
Min hFE	35
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	116591

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