| Equivalent | 2SB654A | |
| Type | Transistor Silicon PNP | |
| Case | TO3 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 120 | |
| Vbr CEO | 120 | |
| Max. PD (W) | 80 | |
| Derate (Amb) (W/°C) | 640m | |
| Max. hFE | 200 | |
| Min hFE | 35 | |
| Ic Max. (A) | 7.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | PNP | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 80 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 120 V | |
| Maximum Collector Current |Ic max| | 7 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Transition Frequency (ft): | 10 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 35 | |
| SKU | 116592 | |