2SB655

SKU: 2SB655

2SB655 Transistor Silicon PNP CASE: TO3 MAKE: Hitachi

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Equivalent	2SB655A
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	160
Vbr CEO	140
Max. PD (W)	100
Derate (Amb) (W/°C)	800m
Max. hFE	200
Min hFE	35
Ic Max. (A)	12
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	116593

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