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2SB668A
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2SB668A

SKU: 2SB668A
2SB668A Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Matsushita Electronics
Vbr CEO 80
Max. PD (W) 25
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 100k
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8000
SKU 116595
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