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2SB669
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2SB669

SKU: 2SB669
2SB669 Transistor Silicon PNP CASE: SOT78 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB669A
Type Transistor Silicon PNP
Case SOT78
Manufacturer Matsushita Electronics
Vbr CEO 70
Max. PD (W) 40
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 625m
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 100k
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8000
SKU 394902
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