2SB66H

SKU: 2SB66H

2SB66H Transistor Germanium PNP CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SB66
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Hitachi
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	150m
C(ob) (F)	30p
hfe	70
Ic Max. (A)	70m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	PNP
Trans. Freq (Hz) Min.	.70M
@VCE (test) (V)	6.0
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.07 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	590603

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