2SB678

SKU: 2SB678

2SB678 Transistor Silicon PNP CASE: TO39 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Toshiba
Vbr CEO	100
Max. PD (W)	8.0
Min hFE	2.0k
Ic Max. (A)	1.5
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	10u
Mat.	Silicon Logic
Polarity	PNP
Derate Above 25°C	64m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	584663

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