| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO220 |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
100 |
| Vbr CEO |
100 |
| Max. PD (W) |
30 |
| Derate (Amb) (W/°C) |
240m |
| Max. hFE |
300 |
| Min hFE |
55 |
| Ic Max. (A) |
4.0 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
30u |
| Polarity |
PNP |
| R(sat) (Û) |
570m |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
30 W |
| Maximum Collector-Base Voltage |Vcb| |
100 V |
| Maximum Collector-Emitter Voltage |Vce| |
100 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
45 pF |
| Transition Frequency (ft): |
4 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
55 |
| SKU |
116596 |