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2SB685
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2SB685

SKU: 2SB685
2SB685 Transistor Silicon PNP CASE: TO218 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Mitsubishi
Vbr CEO 110
Max. PD (W) 80
Max. hFE 24k
Min hFE 2.0k
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 430m
Derate Above 25°C 640m
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 12000
SKU 767032
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