2SB689

SKU: 2SB689

2SB689 Transistor Silicon PNP CASE: TO218 MAKE: Hitachi

Datasheet

2SB689 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Hitachi
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	40
Derate (Amb) (W/°C)	320m
Max. hFE	350
Min hFE	25
Ic Max. (A)	4.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
R(sat) (Û)	1.0
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	116598

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