2SB69

SKU: 2SB69

2SB69 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	25
Max. hFE	160
Min hFE	34
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	330u
Polarity	PNP
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	75
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	34
SKU	584232

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