2SB705B

SKU: 2SB705B

2SB705B Transistor Silicon PNP CASE: MT200 MAKE: Generic

Datasheet

2SB705B Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	MT200
Manufacturer	Unknow
Vbr CBO	160
Vbr CEO	160
Max. PD (W)	120
Derate (Amb) (W/°C)	960m
Max. hFE	200
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	17M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	4-33
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	430 pF
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	343658

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