2SB709

SKU: 2SB709

2SB709 Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics

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£4.79 Inc. VAT (£3.99 Ex. VAT)

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Datasheet

2SB709 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	200m
C(ob) (F)	2.7p
Derate (Amb) (W/°C)	2.0m
hfe	90
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	80M
@VCE (test) (V)	10i
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	2.7 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	116606

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