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2SB710A
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2SB710A

SKU: 2SB710A
2SB710A Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
2SB710A Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 200m
C(ob) (F) 6p
hfe 160
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 0.1u
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-16
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.24 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 343662
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