The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB713
View detailed images (12)

2SB713

SKU: 2SB713
2SB713 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Matsushita Electronics
Vbr CBO 200
Vbr CEO 140
Max. PD (W) 100
Max. hFE 200
Min hFE 40
Ic Max. (A) 9.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 7M
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 9 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 394912
Back