| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO92 |
| Manufacturer |
Hitachi |
| Vbr CBO |
25 |
| Vbr CEO |
20 |
| Max. PD (W) |
625m |
| C(ob) (F) |
15p |
| Derate (Amb) (W/°C) |
5.0m |
| hfe |
300= |
| Ic Max. (A) |
700m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
350m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.625 W |
| Maximum Collector-Base Voltage |Vcb| |
25 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.7 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
20 pF |
| Transition Frequency (ft): |
175 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
542456 |