| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO92 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
80 |
| Vbr CEO |
80 |
| Max. PD (W) |
250m |
| hfe |
180 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| @VCE (test) (V) |
5.0i |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Transition Frequency (ft): |
40 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
180 |
| SKU |
116613 |