2SB745

SKU: 2SB745

2SB745 Transistor Silicon PNP CASE: SIP3 MAKE: Matsushita Electronics

Datasheet

2SB745 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SIP3
Manufacturer	Matsushita Electronics
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	300m
hfe	1.0k=
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
@VCE (test) (V)	5.0i
Oper. Temp (°C) Max.	135
@Ic (A)	2.0m
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	130 MHz
Forward Current Transfer Ratio (hFE), MIN	180
SKU	343670

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