2SB745A

SKU: 2SB745A

2SB745A Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SB745A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	55
Vbr CEO	55
Max. PD (W)	300m
hfe	1.0k=
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
@VCE (test) (V)	5.0i
Oper. Temp (°C) Max.	135
@Ic (A)	2.0m
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	130 MHz
Forward Current Transfer Ratio (hFE), MIN	180
SKU	343671

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