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2SB755
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2SB755

SKU: 2SB755
2SB755 Transistor Silicon PNP CASE: HPAK MAKE: Toshiba
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
2SB755 Datasheet
Product specifications
Type Transistor Silicon PNP
Case HPAK
Manufacturer Toshiba
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 120
Derate (Amb) (W/°C) 960m
Max. hFE 160
Min hFE 55
Ic Max. (A) 12
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 450 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 55
SKU 82442
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