2SB755

SKU: 2SB755

2SB755 Transistor Silicon PNP CASE: HPAK MAKE: Toshiba

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

2SB755 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	HPAK
Manufacturer	Toshiba
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	120
Derate (Amb) (W/°C)	960m
Max. hFE	160
Min hFE	55
Ic Max. (A)	12
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	450 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	55
SKU	82442

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