2SB756
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2SB756

SKU: 2SB756
2SB756 Transistor Silicon PNP CASE: MT200 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case MT200
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 450 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 55
SKU 116621
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