2SB76

SKU: 2SB76

2SB76 Transistor Germanium PNP CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Hitachi
Vbr CBO	12
Max. PD (W)	150m
hfe	55
Ic Max. (A)	70m
Icbo Max. @Vcb Max. (A)	14u
Polarity	PNP
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	12 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	542103

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