2SB767

SKU: 2SB767

2SB767 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics

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£4.79 Inc. VAT (£3.99 Ex. VAT)

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Datasheet

2SB767 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	330
Ic Max. (A)	500m
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	100m
Polarity	PNP
Trans. Freq (Hz) Min.	120M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	343676

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